GaN and Graphene: Extreme Materials for the Future of Electronics


Thursday, December 10, 2015, 6:15pm


RCC, 26 Trowbridge, Cambridge MA 02138

RCC is pleased to announce this talk by Dr Tomas Palacios, the Emmanuel E. Landsman Career Development Associate Professor of Electrical Engineering and Computer Science at Massachusetts Institute of Technology (MIT).

Silicon, which has dominated the electronics industry during the last forty years, is reaching its ultimate limit. This talk will introduce two new semiconductor materials whose extreme properties have the potential to push electronics for another forty years: Gallium Nitride (GaN) and graphene. More than 20% of the world's energy consumption could be saved by using GaN in lighting and power electronics, while graphene will enable ubiquitous electronics, embedded on every object around us.

Registration is requiredPlease, click here for more information about the event.

This program will be in English and refreshments will be served.

Sponsor(s): Españoles Científicos en USA (ECUSA)Fundación Española para la Ciencia y la TecnologíaFundación Ramón ArecesReal Colegio Complutense.


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